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| DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 1.0 MIN. 1.0 MIN. 0.2 1.2 -0.1 +0.2 1.5 0.2 3 FEATURES 7 0.3 * High Linear Power and Gain * Low Internal Modulation Distortion * High Reliability Gold Metallization * 24 V Operation 1.6 0.3 2 2 0.2 * Emitter Ballasting 0.1 -0.04 +0.06 3.0 6.2 0.2 1 1 - EMITTER 2 - BASE 3 - COLLECTOR ABSOLUTE MAXIMUM RATING (TA = 25 C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector to Emitter Voltage Collector Current Power Dissipation Thermal Resistance Junction Temperature Storage Temperature SYMBOL VCBO VCER VEBO VCEO IC PT Rth(j-c) Tj Tstg R = 10 SPECIFIED CONDITION RATINGS 45 30 3 18 0.5 7.4 23.6 200 -65 to 150 10 0.3 UNIT V V V V A W C/W C C Document No. P11581EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan (c) 1996 NEL200101-24 ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Collector to Emitter Cutoff Current Collector to Emitter Voltage (Base to Emitter Registor = 10 ) Collector to Emitter Voltage (Open Base) Collector to Base Voltage (Open Emitter) Emitter to Base Voltage (Open Collector) DC Forward Current Gain Output Capacitance SYMBOL ICES SPECIFIED CONDITION VCE = 24 V IC = 1 mA, R = 10 MIN. TYP. MAX. 1 UNIT mA VCER 30 85 V VCEO IC = 1 mA 18 22 V VCBO IC = 1 mA 45 85 V VEBO IC = 3 mA 3 4.4 V hFE Cob VCE = 5 V, IC = 0.1 A VCE = 24 V, f = 1 MHz 30 100 3 150 pF 2 NEL200101-24 PERFORMANCE SPECIFICATIONS (TA = 25 C) CLASS AB OPERATION PARAMETER Output Power SYMBOL PIdB SPECIFIED CONDITION f = 1.97 GHz, Iq = 20 mA, VCC = 24 V, CLASS AB f = 1.97 GHz, Pout = PIdB, Iq = 20 mA, VCC = 24 V, CLASS AB f = 1.97 GHz, Pin = 0.04 W, Iq = 20 mA, VCC = 24 V, CLASS AB f = 1.97 GHz, f = 100 kHz, 2 W PEP, VCC = 24 V, Iq = 20 mA, CLASS AB MIN. TYP. 2.5 MAX. UNIT W Collector Efficiency c GL 54 % Linear Gain 8.8 dB 3rd Order Intermodulation IM3 -33 dBc CLASS A OPERATION PARAMETER Output Power SYMBOL PIdB SPECIFIED CONDITION f = 1.97 GHz, Iq = 100 mA, VCC = 20 V, CLASS A f = 1.97 GHz, Pout = PIdB, Iq = 100 mA, VCC = 20 V, CLASS A f = 1.97 GHz, Pin = 0.01 W, Iq = 100 mA, VCC = 20 V, CLASS A f = 1.97 GHz, f = 100 kHz, 0.5 W PEP, VCC = 20 V, Iq = 100 mA, CLASS A MIN. 0.5 TYP. 0.7 MAX. UNIT W Collector Efficiency c GL 30 % Linear Gain 10.8 dB 3rd Order Intermodulation IM3 -36 dBc 3 NEL200101-24 Gain (dB) 11 10 9 8 7 60 f = 1970 MHz Class AB, Vcc = 24 V Iq = 20 mA Class A, Vcc = 20 V Iq = 100 mA c (%) 50 40 30 20 0.5 W 1.0 W Pout (dBm) 20 24 28 32 36 -25 f1 = 1970 MHz f2 = 1970.1 MHz Class AB, Vcc = 24 V Iq = 20 mA -30 IM3 Class A, Vcc = 20 V Iq = 100 mA -35 IM5 -40 IM (dBc) -45 IM7 -50 -55 -60 20 24 28 32 36 40 Pout (dBm) *** PEP 4 NEL200101-24 S-PARAMETER NEL2001 Class A VCC = 20 V, Icq = 0.1 A FREQUENCY GHz 1.70 1.71 1.72 1.73 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 MAG 0.75 0.75 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 S11 ANG (DEG) 130 129 129 128 128 127 127 127 126 126 125 125 124 124 124 124 123 122 122 122 121 121 120 120 119 119 119 118 118 118 117 MAG 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 S12 ANG (DEG) -7 -6 -6 -7 -7 -7 -6 -7 -7 -8 -8 -9 -10 -7 -6 -6 -8 -9 -9 -10 -9 -9 -10 -10 -10 -10 -10 -9 -9 -10 -11 S21 MAG 2.08 2.07 2.06 2.05 2.04 2.02 2.01 2.00 1.99 1.98 1.97 1.95 1.94 1.93 1.93 1.92 1.91 1.89 1.88 1.87 1.86 1.86 1.85 1.84 1.83 1.81 1.80 1.80 1.80 1.80 1.80 ANG (DEG) 18 18 18 17 16 16 16 15 15 14 14 13 13 12 12 12 11 10 10 10 9 9 8 8 8 7 7 7 6 6 5 MAG 0.41 0.41 0.42 0.42 0.42 0.42 0.42 0.42 0.42 0.42 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.44 0.44 0.44 0.44 0.44 0.44 0.44 0.44 0.45 S22 ANG (DEG) -155 -155 -156 -156 -156 -156 -156 -156 -157 -157 -157 -157 -158 -158 -158 -158 -158 -159 -159 -159 -159 -159 -159 -160 -160 -160 -161 -161 -161 -161 -161 NEL2001 Class AB VCC = 24 V, Icq = 0.02 A FREQUENCY GHz 1.70 1.71 1.72 1.73 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 MAG 0.78 0.78 0.78 0.78 0.77 0.77 0.77 0.77 0.77 0.77 0.77 0.78 0.78 0.78 0.77 0.77 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 S11 ANG (DEG) 131 130 130 130 129 129 128 128 128 127 127 127 126 126 125 125 124 124 123 123 122 122 121 121 121 120 120 120 119 119 118 MAG 0.07 0.06 0.06 0.07 0.07 0.07 0.07 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 S12 ANG (DEG) -11 -11 -11 -10 -11 -11 -11 -11 -11 -11 -11 -13 -14 -14 -13 -13 -12 -12 -12 -12 -12 -12 -13 -13 -13 -13 -12 -12 -12 -12 -12 S21 MAG 1.56 1.53 1.51 1.51 1.52 1.51 1.50 1.48 1.46 1.46 1.46 1.46 1.45 1.43 1.41 1.41 1.41 1.41 1.40 1.38 1.37 1.36 1.37 1.37 1.35 1.34 1.32 1.32 1.32 1.33 1.34 ANG (DEG) 9 9 9 8 8 7 6 6 6 5 5 4 3 3 3 2 2 1 0 0 0 0 -1 -2 -2 -3 -3 -3 -3 -4 -5 MAG 0.53 0.53 0.53 0.53 0.53 0.53 0.53 0.54 0.54 0.54 0.54 0.54 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.56 0.56 0.56 0.56 0.56 0.56 0.56 0.56 0.57 0.57 S22 ANG (DEG) -132 -132 -133 -133 -133 -134 -134 -134 -135 -135 -135 -135 -136 -136 -137 -137 -137 -138 -138 -138 -139 -139 -139 -140 -140 -140 -141 -141 -141 -142 -142 5 NEL200101-24 NEL200101-24 Zin/Zout 1.0 0.9 0.8 1.2 0.7 1 .4 0.6 1.6 2 1 0.2 0.5 4 Zin 0.4 ER EAC T + ANCE JX C Zo OM PO N T EN 2.0 3 1.8 POS ITIV 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 5.0 0.1 0.4 0.6 0.2 0. 8 ENT ON MP E NC TA AC -JX E E R Zo TIV 0.3 0.5 0.6 0.7 0.8 0.9 ZO = 50 ohm f [GHz] 1.80 1.90 1.97 2.00 Zin [ohm] 8.7 + j38 6.3 + j36 5.4 + j33 4.7 + j30 1.0 1.2 Zout [ohm] 2.2 - j19 4.1 - j24 6.4 - j30 10 - j37 Zout Zin 6 1.4 1.6 1.8 2.0 3 4 0.4 0.2 NE GA 4 0. 1 2 Zout 4.0 CO 3. 0 1.0 1. 0 50 RESISTANCE COMPONENT R 0.2 Zo 10 20 50 0 0.8 0. 8 0.6 0.6 1: 1.8 GHz 2: 1.9 3: 1.97 4: 2.0 0 1. 0.4 0.2 0. 4 0.6 0.8 3. 0 0.3 4.0 1.0 5.0 0.2 0.1 10 20 50 NEL200101-24 Circuit Drawing ,,,,,, ,, , , , ,,,,,,,, , ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,, ,,,,,,,,,, ,, , , , , ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, , ,,, , , , 1 Thru hole 1 mm x 4 6 2.5 1 6 8 1 1 16 22 1 22 7 17 0.5 3 50 mm 10 2.3 2 1 3.15 4.15 15 6 8 3.3 6 2.3 7 1 2 10 20 6 25 3 8 3 1 1 input output SUBSTRATE (TEFLON) DICLAD 522T(R) THICKNESS = 0.79 mm DOUBLE SIDE 35 m Cu r = 2.6 40 mm 40 mm 7 NEL200101-24 Components Layout VBB R1 D1 C4 VCC L1 C2 R2 C3 RF input C1 C5 input output R1: 5.1 R2: 30 L1: 5 mm 10T Coil D1: 1S2075 C1, C2, C3, C5: MURATA, 47 pF C4: 22 F (50 V) Electrolytic Capacitor 8 NEL200101-24 APPLICATION = Amplifier Diagrams = 46 mW NEL2001 NEL2012 NEL2035 30 W 95 mW NEL2001 NEL2012 NEL2035 x 2 50 W NEL2035 x 4 40 mW NEL2004 NEL2012 NEL2035 100 W 9 NEL200101-24 [MEMO] 10 NEL200101-24 [MEMO] 11 NEL200101-24 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 |
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